ESD protection device

ABSTRACT

Systems and methods for protecting a device from an electrostatic discharge (ESD) event are provided. A resistor-capacitor (RC) trigger circuit and a driver circuit are provided. The RC trigger circuit is configured to provide an ESD protection signal to the driver circuit. A discharge circuit includes a first metal oxide semiconductor (MOS) transistor and a second MOS transistor connected in series between a first voltage potential and a second voltage potential. The driver circuit provides one or more signals for turning the first and second MOS transistors on and off.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 16/993,399, filed Aug. 14, 2020; which is acontinuation application of U.S. patent application Ser. No. 15/367,304,filed Dec. 2, 2016; which claims priority to U.S. Provisional PatentApplication No. 62/341,247, filed May 25, 2016, entitled “ESD ProtectionDevice”; all of which are incorporated herein by reference in theirentireties.

BACKGROUND

Electrostatic discharge (ESD) is a rapid discharge that flows betweentwo objects due to a build-up of static charge. ESD may destroysemiconductor devices because the rapid discharge can produce arelatively large current. In order to reduce semiconductor failures dueto ESD, ESD protection circuits have been developed to provide a currentdischarge path. When an ESD event occurs, the discharge current isconducted through the discharge path without going through the internalcircuits to be protected.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a block diagram of an electrostatic discharge (ESD)protection device, in accordance with some embodiments.

FIG. 2 illustrates in detail an example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments.

FIG. 3 illustrates another example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments.

FIG. 4 illustrates another example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments.

FIG. 5 illustrates in detail an example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments.

FIG. 6 is a flowchart depicting steps of an example method forprotecting a device from an ESD current, in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

FIG. 1 illustrates a block diagram of an electrostatic discharge (ESD)protection device, in accordance with some embodiments. The ESDprotection device comprises a trigger circuit 100, a driver circuit 102,and a discharge circuit 104. As shown in FIG. 1 , the ESD protectiondevice is coupled between a first voltage potential VDD and a secondvoltage potential VSS. More particularly, each block of the ESDprotection device has a first terminal coupled to the first voltagepotential VDD and a second terminal coupled to the second voltagepotential VSS. The trigger circuit 100 is coupled (e.g., electricallyconnected) to the driver circuit 102, as indicated by connection 106,and is configured to provide an ESD protection signal to the drivercircuit 102. Example ESD protection signals are described in detailbelow.

The driver circuit 102 is coupled to the discharge circuit 104 via oneor more connections 108 and is configured to provide one or more signalsto the discharge circuit 104. The discharge circuit 104 includes firstand second metal oxide semiconductor (MOS) transistors connected inseries between the first voltage potential VDD and the second voltagepotential VSS. In embodiments, the one or more signals generated by thedriver circuit 102 are used to turn the first and second MOS transistorsof the discharge circuit 104 on and off. For example, when an ESD eventoccurs, the one or more signals are used to turn the first and secondMOS transistors on, such that the transistors form an ESD currentdischarge path. After the ESD event is complete, the one or more signalsare used to turn the first and second MOS transistors off, inembodiments.

As explained in further detail below, to turn the first and second MOStransistors off, in embodiments, the driver circuit 102 (i) causes agate terminal of the first MOS transistor to be shorted to a sourceterminal of the first MOS transistor via a first circuit path, and (ii)causes a gate terminal of the second MOS transistor to be shorted to asource terminal of the second MOS transistor via a second circuit paththat is different than the first circuit path. With the gate terminalshorted to the source terminal of a respective MOS transistor, a voltagedifference between the gate and source terminals (i.e., V_(GS)) isapproximately equal to zero, such that the MOS transistor is turned offand the leakage current of the MOS transistor is small (˜0.3 uA). Toturn the first and second MOS transistors on, in embodiments, the drivercircuit 102 decouples the gate and source terminals of the respectivetransistors and provides signals that cause current to flow through thetransistors. Examples of the first and second MOS transistors beingturned off and on by the driver circuit 102 are illustrated in FIGS. 2-4and explained in further detail below.

When an ESD voltage spike is applied between the first voltage potentialVDD and the second voltage potential VSS, the trigger circuit 100 maydetect the voltage spike and subsequently turn on the first and secondMOS transistors of the discharge circuit 104 via the driver circuit 102.The turn-on of the first and second MOS transistors forms a path inwhich a large current is allowed to flow from the first voltagepotential VDD to the second voltage potential VSS. The current path fromthe first voltage potential VDD to the second voltage potential VSS mayprovide a bypass of the ESD current and clamp the voltage between thefirst voltage potential VDD and the second voltage potential VSS to alevel below the maximum voltage rating of an internal circuit (notshown). Accordingly, the ESD protection circuit helps to ensure that thelarge voltage spike does not damage the internal circuit beingprotected.

FIG. 2 illustrates in detail an example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments. In accordancewith an embodiment, the driver circuit 102 comprises first and secondinverters. The first inverter includes a first p-type metal oxidesemiconductor (PMOS) transistor M6 and a first n-type metal oxidesemiconductor (NMOS) transistor M5 connected in series between the firstvoltage potential VDD and the source of M4. The first inverter includesan input node 202 and an output node 204. The second inverter includes asecond PMOS transistor M1 and a second NMOS transistor M2 connected inseries between the first voltage potential VDD and the source of M3 (orthe second voltage potential VSS). The second inverter includes an inputnode 206 and an output node 208.

The input nodes 202, 206 of the respective first and second invertersreceive a signal (e.g., an ESD protection signal) from the triggercircuit 100. The first inverter provides an inverted signal to a gateterminal of a MOS transistor M4 of the discharge circuit 104, and thesecond inverter likewise provides the inverted signal to a gate terminalof a MOS transistor M3 of the discharge circuit 104. As illustrated inthe figure, the MOS transistors M3 and M4 are connected in seriesbetween the first voltage potential VDD and the second voltage potentialVSS. In the example of FIG. 2 , both the first and second MOStransistors M3, M4 are NMOS transistors. In other embodiments, thestacked first and second MOS transistors M3, M4 of the discharge circuit104 are both PMOS transistors (e.g., with one or more changes made tothe circuits 100, 102, etc.). In other embodiments, M3 is an NMOStransistor, and M4 is a PMOS transistor (e.g., with one or more changesmade to the circuits 100, 102, etc.).

As shown in the illustration of FIG. 2 , the gate terminal of the MOStransistor M4 is coupled to the node 204 of the driver circuit 102, andthe gate terminal of the MOS transistor M3 is coupled to the differentnode 208 of the driver circuit 102. Because the gate terminals of therespective MOS transistors M3, M4 are coupled to the separate anddistinct nodes 204, 208 of the driver circuit 102, it is evident thatthe gate terminals of the respective MOS transistors M3, M4 are not tiedtogether (i.e., the gate terminal of the MOS transistor M3 is notshorted to the gate terminal of the MOS transistor M4).

It is noted that although FIG. 2 illustrates the driver circuit 102 asincluding a single inverter coupled to the gate terminal of the MOStransistor M4 and a single inverter coupled to the gate terminal of theMOS transistor M3, the driver circuit 102 may accommodate any number ofinverters connected in cascade. Thus, for instance, in embodiments, thegate terminal of the MOS transistor M4 is connected to an output of athird (i.e., final) inverter of a series of three inverters connected incascade. Likewise, in embodiments, the gate terminal of the MOStransistor M3 is connected to an output node of three invertersconnected in cascade. Other numbers of inverters connected in cascadeare utilized in other examples. One of ordinary skill in the art wouldrecognize other variations, alternatives, and modifications to thecircuit diagram of FIG. 2 . For instance, one of ordinary skill in theart would recognize that PMOS transistors may be used in place of NMOStransistors (e.g., with one or more changes made to the circuits 100,102, etc.).

In the example of FIG. 2 , the trigger circuit 100 is aresistor-capacitor (RC) trigger circuit having a resistor RO and acapacitor 214 connected in series and coupled together at a node 216. Inaccordance with an embodiment, the capacitor 214 is implemented byconnecting a drain and a source of a MOS transistor (e.g., an NMOStransistor) together as shown in FIG. 2 . It should be noted that whileFIG. 2 illustrates the capacitor 214 formed by a single NMOS transistor,in other examples, the capacitor 214 is formed by any number of MOStransistors (e.g., NMOS transistors) connected in parallel. The inputnode 202 of the first inverter (i.e., the inverter formed by thetransistors M5 and M6) and the input node 206 of the second inverter(i.e., the inverter formed by the transistors M1 and M2) are coupled tothe node 216 of the trigger circuit 100.

During a normal mode of operation of the ESD protection device (e.g.,when the first voltage potential VDD is free of ESD spikes), thecapacitor 214 is fully charged to a logic high state. As a result, theMOS transistor M5 of the first inverter is turned on and able to conductcurrent. In this turned-on state, a voltage drop between drain andsource terminals (i.e., V_(DS)) of the MOS transistor M5 isapproximately equal to zero. As can be seen in FIG. 2 , the gate of theMOS transistor M4 of the discharge circuit 104 is coupled to the drainof the MOS transistor M5, and the source of M4 is coupled to the sourceof M5. With these connections, a voltage drop between the gate andsource terminals (i.e., V_(GS)) of the MOS transistor M4 isapproximately equal to zero, such that the MOS transistor M4 is turnedoff. Accordingly, it can be seen that during normal operation, the gateterminal of the MOS transistor M4 is shorted to the source terminal ofthe MOS transistor M4 via a first circuit path 210. The driver circuit102 accomplishes this shorting of the gate and source terminals bycausing the V_(DS) voltage drop of the MOS transistor M5 to beapproximately equal to zero, as described above.

Continuing the above description of the normal mode of operation of theESD protection device, in this mode of operation, the MOS transistor M2of the second inverter is turned on and able to conduct current (i.e.,as a result of the capacitor 214 being charged to a logic high state).In this turned-on state, a voltage drop between drain and sourceterminals (i.e., V_(DS)) of the MOS transistor M2 is approximately equalto zero. As can be seen in FIG. 2 , the gate of the MOS transistor M3 ofthe discharge circuit 104 is coupled to the drain of the MOS transistorM2, and the source of M3 is coupled to the source of M2. With theseconnections, a voltage drop between the gate and source terminals (i.e.,V_(GS)) of the MOS transistor M3 is approximately equal to zero, suchthat the MOS transistor M3 is turned off. Accordingly, it can be seenthat during normal operation, the gate terminal of the MOS transistor M3is shorted to the source terminal of the MOS transistor M3 via a secondcircuit path 212. The second circuit path 212 is different than thefirst circuit path 210. It is thus noted that the gate terminals of therespective MOS transistors M4, M3 are not tied together. It is furthernoted that when the transistors M4, M3 are turned off, the gateterminals of the respective transistors are shorted to theircorresponding source terminals via the separate and distinct circuitpaths 210, 212.

In the normal mode of operation of the ESD protection device, turningoff the MOS transistors M4, M3 of the discharge circuit 104 (asdescribed above) eliminates or reduces an amount of leakage currentflowing from the first voltage potential VDD to the second voltagepotential VSS. In embodiments, the RC time constant of the triggercircuit 100 is in the microsecond range or even hundreds of nanoseconds(e.g., 0.1 μS), which can prevent false triggering during a normal powerup with a rise time in the range of milliseconds. On the other hand, theRC trigger circuit 100 can generate an ESD trigger signal when an ESDvoltage spike having nanoseconds rise time is applied to the rail VDD.For example, when a voltage spike (e.g., an ESD spike) occurs at therail VDD, during the rise time of the voltage spike, the capacitor 214stays low because the longer RC time constant of the trigger circuit 100causes a slow increase of the voltage of the capacitor 214.

As a result of the capacitor 214 being at the logic low state during thevoltage spike, the MOS transistors M5 and M2 of the driver circuit 102are turned off, and voltage drops between drain and source terminals(i.e., V_(DS)) of the respective transistors M5 and M2 are not equal tozero. Accordingly, voltage drops between gate and source terminals(i.e., V_(GS)) of the respective transistors M4 and M3 of the dischargecircuit 104 are larger than the threshold voltage, such that thesetransistors M4 and M3 are turned on. The turn-on of the MOS transistorsM4 and M3 provides an ESD current path so that the voltage at rail VDDwill be clamped a level below the maximum voltage rating to which thevoltage rail VDD is specified. The current path from the first voltagepotential VDD to the second voltage potential VSS may provide a bypassof the ESD current, thus helping to ensure that an internal circuit (notshown) is protected and not damaged by the voltage spike.

The approaches of the instant application differ from conventionalapproaches. In some conventional approaches, ESD protection circuitsutilize a single, large FET transistor, which is commonly referred to asa “bigFET.” When an ESD event occurs, the large FET transistor is turnedon, thus providing a current path between VDD and VSS. During normaloperation (e.g., when no ESD events are occurring), the large FETtransistor is turned off. Although the large FET is turned off duringthe normal operation, a leakage current through the large FET isrelatively high, in examples. This leakage current through the large FETis attributable to a voltage drop between drain and source terminals(i.e., V_(DS)) of the large FET, in examples.

In contrast to these conventional approaches, under the approaches ofthe instant disclosure, a single, large FET transistor is not used indischarging ESD currents. Rather, as described herein, under theapproaches of the instant disclosure, two stacked MOS transistors (e.g.,stacked MOS transistors M4, M3 of FIG. 2 ) are utilized in a dischargecircuit. The use of the two stacked MOS transistors (as opposed to thesingle, large bigFET of the conventional approaches) lowers a leakagecurrent in the discharge circuit. In embodiments, the leakage current ofthe discharge circuit is lower because the stacked MOS transistors eachhave a lower V_(DS) voltage drop, as compared to the V_(DS) of thebigFET of the conventional approaches, which results in the lowerleakage current. The V_(DS) voltage drops of the stacked MOS transistorsare lower than that of the bigFET because the stacked MOS transistorsshare the same VDD and VSS rails, in examples.

FIG. 3 illustrates another example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments. In the exampleembodiment of FIG. 3 , the RC trigger circuit 100 and the dischargecircuit 104 are the same as or similar to those of FIG. 2 , and forbrevity, the descriptions of the RC trigger circuit 100 and thedischarge circuit 104 are not repeated here. In the example embodimentof FIG. 3 , the driver circuit 102 differs from that of FIG. 2 , andsuch differences are explained in detail below.

In accordance with an embodiment, the driver circuit 102 of FIG. 3comprises an inverter. The inverter includes a p-type metal oxidesemiconductor (PMOS) transistor M1 and an n-type metal oxidesemiconductor (NMOS) transistor M2 connected in series between the firstvoltage potential VDD and the second voltage potential VSS. The inverterincludes an input node 306 and an output node 308. The driver circuit102 of FIG. 3 further comprises PMOS transistors M6 and M5 connected inseries, as shown in the figure. The PMOS transistors M6 and M5 arecoupled together at a node 304.

The input node 306 of the inverter is coupled to the node 216 of thetrigger circuit 100, thus enabling the inverter to receive a signal(e.g., an ESD protection signal) from the trigger circuit 100. Theinverter provides an inverted signal to (i) a gate terminal of the PMOStransistor M5, and (ii) a gate terminal of the MOS transistor M3 of thedischarge circuit 104. In the example of FIG. 3 , a gate terminal of theMOS transistor M4 is coupled to the node 304 of the driver circuit 102,as shown in the figure.

When the first voltage potential VDD is free of ESD spikes (alsoreferred to herein as a normal mode of operation of the ESD protectiondevice), the capacitor 214 of the trigger circuit 100 is fully chargedto a logic high state. As a result, the MOS transistor M2 of theinverter is turned on and able to conduct current. As explained abovewith reference to FIG. 2 , in this turned-on state, a V_(DS) of the MOStransistor M2 is approximately equal to zero, which causes a voltagedrop between the gate and source terminals (i.e., V_(GS)) of the MOStransistor M3 to be approximately equal to zero. Accordingly, in thenormal mode of operation, the MOS transistor M3 is turned off. The gateterminal of the MOS transistor M3 is thus shorted to the source terminalof the MOS transistor M3 via a first circuit path 312.

Continuing the above description of the normal mode of operation of theESD protection device, in this mode of operation, because a logic stateof the input node 306 of the inverter is “high,” a logic state of theoutput node 308 of the inverter is “low.” The gate terminal of the PMOStransistor M5 is coupled to the output node 308 of the inverter and thustakes on the logic low state. As a result, the PMOS transistor M5 isturned on and able to conduct current. In this turned-on state, a V_(DS)of the PMOS transistor M5 is approximately equal to zero, which causes avoltage drop between the gate and source terminals (i.e., V_(GS)) of theMOS transistor M4 to be approximately equal to zero. Accordingly, in thenormal mode of operation, the MOS transistor M4 is turned off. The gateterminal of the MOS transistor M4 is thus shorted to the source terminalof the MOS transistor M4 via a second circuit path 310. Turning off theMOS transistors M4, M3 during the normal mode of operation eliminates orreduces an amount of leakage current flowing from the first voltagepotential VDD to the second voltage potential VSS.

When an ESD event occurs on the first voltage potential VDD, the RCtrigger circuit 100 generates an ESD trigger signal. Specifically, whena voltage spike (e.g., an ESD spike) occurs on the rail VDD, during therise time of the voltage spike, the capacitor 214 stays low. The logiclevel low of the capacitor 214, present at the node 216 of the triggercircuit 100, is an example of an ESD trigger signal (also referred toherein as an “ESD protection signal”). As a result of the capacitor 214being at the logic low state, the MOS transistors M5 and M2 of thedriver circuit 102 are turned off, thus causing the MOS transistors M4and M3 of the discharge circuit 104 to turn on. The turning on of theMOS transistors M4 and M3 as a result of the ESD protection signal isdescribed in detail above with reference to FIG. 2 . The turn-on of theMOS transistors M4 and M3 provides an ESD current path and thus helps toensure that an internal circuit (not shown) is protected and not damagedby the voltage spike.

FIG. 4 illustrates another example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments. In the exampleembodiment of FIG. 4 , the RC trigger circuit 100 is the same as orsimilar to those of FIGS. 2 and 3 . For brevity, the description of theRC trigger circuit 100 is not repeated here. In the example embodimentof FIG. 4 , the driver circuit 102 and the discharge circuit 104 differfrom those of FIGS. 2 and 3 , and such differences are explained indetail below.

In accordance with an embodiment, the driver circuit 102 of FIG. 4comprises first and second inverters. Although the use of two invertersis similar to the embodiment of FIG. 2 , other aspects of the drivercircuit 102 are different in FIG. 4 , as described below. The firstinverter includes a first PMOS transistor M6 and a first NMOS transistorM5 connected in series between the first voltage potential VDD and thesecond voltage potential VSS. The first inverter includes an input node402 and an output node 404. The second inverter includes a second PMOStransistor M1 and a second NMOS transistor M2 connected in seriesbetween the first voltage potential VDD and the second voltage potentialVSS. The second inverter includes an input node 406 and an output node408.

The input node 406 of the second inverter receives a signal (e.g., anESD protection signal) from the trigger circuit 100. The second inverterprovides an inverted signal to (i) the input node 402 of the firstinverter, and (ii) a gate terminal of an NMOS transistor M3 of thedischarge circuit 104. To provide the inverted signal to the gateterminal of the NMOS transistor M3, the node 408 of the driver circuit102 is coupled to this gate terminal. The first inverter inverts thesignal received from the second inverter and provides an output signalto a gate terminal of the PMOS transistor M4 of the discharge circuit104. To provide the output signal to the gate terminal of the PMOStransistor M4, the node 404 of the driver circuit 102 is coupled to thisgate terminal. As illustrated in the example of FIG. 4 , the PMOStransistor M4 and the NMOS transistor M3 of the discharge circuit 104are connected in series between the first voltage potential VDD and thesecond voltage potential VSS. The use of one PMOS transistor and oneNMOS transistor in the discharge circuit 104 of FIG. 4 differs fromFIGS. 2 and 3 , which both used a stack of two NMOS transistors in thedischarge circuit 104. It is noted that in other examples, a dischargecircuit uses a stack of two PMOS transistors.

In the example of FIG. 4 , the input node 406 of the second inverter(i.e., the inverter formed by the transistors M1 and M2) is coupled tothe node 216 of the trigger circuit 100. During a normal mode ofoperation of the ESD protection device (e.g., when the first voltagepotential VDD is free of ESD spikes), the capacitor 214 is fully chargedto a logic high state. As a result, the MOS transistor M2 of the secondinverter is turned on and able to conduct current. In this turned-onstate, a voltage drop between drain and source terminals (i.e., V_(DS))of the MOS transistor M2 is approximately equal to zero. Thus, the drainand source terminals of the MOS transistor M2 are at approximately thesame voltage potential. As can be seen in FIG. 4 , the gate of the MOStransistor M3 of the discharge circuit 104 is coupled to the drain ofthe MOS transistor M2, and the source of M3 is coupled to the source ofM2. With these connections, a voltage drop between the gate and sourceterminals (i.e., V_(GS)) of the MOS transistor M3 is approximately equalto zero, such that the MOS transistor M3 is turned off. Accordingly, itcan be seen that during normal operation, the gate terminal of the MOStransistor M3 is shorted to the source terminal of the MOS transistor M3via a first circuit path 412.

Continuing the above description of the normal mode of operation of theESD protection device, in this mode of operation, because a logic stateof the node 406 of the second inverter is “high,” a logic state of theoutput node 408 of the second inverter is “low.” The input node 402 ofthe first inverter is coupled to the output node 408 and thus takes onthe logic level low state. The gate terminal of the PMOS transistor M6is coupled to the input node 402 of the first inverter, and as a result,the PMOS transistor M6 is turned on and able to conduct current. In thisturned on state, a V_(DS) of the PMOS transistor M6 is approximatelyequal to zero, which causes a voltage drop between the gate and sourceterminals (i.e., V_(GS)) of the PMOS transistor M4 to be approximatelyequal to zero. Accordingly, in the normal mode of operation, the PMOStransistor M4 is turned off. The gate terminal of the PMOS transistor M4is thus shorted to the source terminal of the PMOS transistor M4 via asecond circuit path 410.

When an ESD event occurs on the first voltage potential VDD, the RCtrigger circuit 100 generates an ESD trigger signal. Specifically, whena voltage spike (e.g., an ESD spike) occurs on the rail VDD, during therise time of the voltage spike, the capacitor 214 stays low, asdescribed above. As a result of the capacitor 214 being at the logic lowstate, the MOS transistors M6 and M2 of the driver circuit 102 areturned off, and voltage drops between drain and source terminals (i.e.,V_(DS)) of the respective transistors M6 and M2 are not equal to zero.Accordingly, voltage drops between gate and source terminals (i.e.,V_(GS)) of the respective transistors M4 and M3 of the discharge circuit104 are larger than the threshold voltage, such that these transistorsM4 and M3 are turned on. The turn-on of the MOS transistors M4 and M3provides an ESD current path so that the voltage at rail VDD will beclamped a level below the maximum voltage rating to which the voltagerail VDD is specified. The current path from the first voltage potentialVDD to the second voltage potential VSS may provide a bypass of the ESDcurrent, thus helping to ensure that an internal circuit (not shown) isprotected and not damaged by the voltage spike.

FIG. 5 illustrates another example embodiment of the ESD protectiondevice of FIG. 1 , in accordance with some embodiments. In the exampleof FIG. 5 , the discharge circuit 104 uses first and second MOStransistors M12, M13 that are PMOS transistors. This varies from theembodiments of FIGS. 2 and 3 , which include discharge circuits withstacked NMOS transistors. The embodiment of FIG. 5 also varies from theembodiment of FIG. 4 , which includes a discharge circuit having an NMOStransistor and a PMOS transistor.

In accordance with an embodiment, the driver circuit 102 comprises firstand second inverters. The first inverter includes a first PMOStransistor M16 and a first NMOS transistor M17 connected in seriesbetween a source of PMOS transistor M13 and the second voltage potentialVSS. The first inverter includes an input node 502 and an output node504. The second inverter includes a second PMOS transistor M15 and asecond NMOS transistor M11 connected in series the first voltagepotential VDD and the second voltage potential VSS. The second inverterincludes an input node 506 and an output node 508.

The input nodes 502, 506 of the respective first and second invertersreceive a signal (e.g., an ESD protection signal) from the triggercircuit 100. The first inverter provides an inverted signal to a gateterminal of the PMOS transistor M13 of the discharge circuit 104, andthe second inverter likewise provides the inverted signal to a gateterminal of the PMOS transistor M12 of the discharge circuit 104. Asillustrated in the figure, the MOS transistors M12 and M13 are connectedin series between the first voltage potential VDD and the second voltagepotential VSS.

As shown in the illustration of FIG. 5 , the gate terminal of the PMOStransistor M13 is coupled to the node 504 of the driver circuit 102, andthe gate terminal of the PMOS transistor M12 is coupled to the differentnode 508 of the driver circuit 102. Because the gate terminals of therespective PMOS transistors M12, M13 are coupled to the separate anddistinct nodes 504, 508 of the driver circuit 102, it is evident thatthe gate terminals of the respective MOS transistors M12, M13 are nottied together (i.e., the gate terminal of the MOS transistor M12 is notshorted to the gate terminal of the MOS transistor M13).

In the example of FIG. 5 , the trigger circuit 100 is an RC triggercircuit having a resistor R2 and a capacitor 514 connected in series andcoupled together at a node 516. In accordance with an embodiment, thecapacitor 514 is implemented by connecting a drain and a source of a MOStransistor (e.g., a PMOS transistor) together as shown in FIG. 5 . Itshould be noted that while FIG. 5 illustrates the capacitor 514 formedby a single PMOS transistor, in other examples, the capacitor 514 isformed by any number of MOS transistors (e.g., PMOS transistors)connected in parallel. The input node 502 of the first inverter (i.e.,the inverter formed by the transistors M16 and M17) and the input node506 of the second inverter (i.e., the inverter formed by the transistorsM11 and M15) are coupled to the node 516 of the trigger circuit 100.

During a normal mode of operation of the ESD protection device (e.g.,when the first voltage potential VDD is free of ESD spikes), thecapacitor 514 is discharged to a logic level low state. As a result, theinputs 502, 506 to the respective first and second inverters receive thelogic level low input, causing the outputs 504, 508 of the respectivefirst and second inverters to both have a logic level high state. Thelogic level high state output by the first and second inverters isreceived at the gate terminals of the PMOS transistors M12, M13, causingthese transistors to be turned off. Accordingly, it can be seen thatduring normal operation, the PMOS transistors M12, M13 are turned off.In the normal mode of operation of the ESD protection device, turningoff the MOS transistors M12, M13 of the discharge circuit 104 eliminatesor reduces an amount of leakage current flowing from the first voltagepotential VDD to the second voltage potential VSS.

When a voltage spike occurs at the rail VDD, the capacitor 514 chargesto a logic level high state. As a result, the inputs 502, 506 to therespective first and second inverters receive the logic level highinput, causing the outputs 504, 508 of the respective first and secondinverters to both have a logic level low state. The logic level high lowoutput by the first and second inverters is received at the gateterminals of the PMOS transistors M12, M13, causing these transistors tobe turned on. The turn-on of the MOS transistors M12 and M13 provides anESD current path so that the voltage at rail VDD will be clamped a levelbelow the maximum voltage rating to which the voltage rail VDD isspecified. The current path from the first voltage potential VDD to thesecond voltage potential VSS may provide a bypass of the ESD current,thus helping to ensure that an internal circuit (not shown) is protectedand not damaged by the voltage spike.

Examples of the trigger circuit 100, driver circuit 102, and dischargecircuit 104 are presented herein, and it is noted that other embodimentsof the circuits 100, 102, 104 are utilized in other examples. Forinstance, in embodiments, the driver circuit 102 differs from what isillustrated in FIGS. 2-5 . In such embodiments, the driver circuit 102can include various other circuits that turn on the stacked MOStransistors of the discharge circuit 104 during ESD events and turn offthese transistors during normal operation modes. One or more of thetransistors utilized in the trigger circuit 100, drive circuit 102, anddischarge circuit 104 are Fin Field Effect Transistors (FinFETs), inembodiments. It is thus noted that the approaches of the instantdisclosure may be used to provide ESD power clamps for FinFETtechnology.

FIG. 6 is a flowchart depicting steps of an example method forprotecting a device from an ESD event, in accordance with someembodiments. FIG. 6 is described with reference to FIG. 2 above for easeof understanding. But the process of FIG. 6 is applicable to othercircuits and systems as well. At 602, a first metal oxide semiconductor(MOS) transistor (e.g., transistor M3 of the discharge circuit 104) anda second MOS transistor (e.g., transistor M4 of the discharge circuit104) of a discharge circuit are turned off when a first voltagepotential (e.g., VDD, as illustrated in FIG. 2 ) is free of ESD spokes.The first and second MOS transistors are connected in series between thefirst voltage potential and a second voltage potential (e.g., VSS, asillustrated in FIG. 2 ). At 604, when an ESD spike is applied to thefirst voltage potential, the first and second MOS transistors are turnedon to cause an ESD current to flow through the transistors. It is notedthat in embodiments, the ordering of the steps 602, 604 varies from thatdepicted in the figure.

The present disclosure is directed to systems and methods for protectinga device from an electrostatic discharge (ESD) event. An example ESDprotection device includes a resistor-capacitor (RC) trigger circuit anda driver circuit configured to receive an ESD protection signal from theRC trigger circuit. The ESD protection device also includes a dischargecircuit comprising a first metal oxide semiconductor (MOS) transistorand a second MOS transistor connected in series between a first voltagepotential and a second voltage potential. The driver circuit providesone or more signals for turning the first and second MOS transistors onand off.

An example discharge circuit of an ESD protection device includes afirst metal oxide semiconductor (MOS) transistor and a second MOStransistor connected in series with the first MOS transistor between afirst voltage potential and a second voltage potential. The first andsecond MOS transistors are configured to receive one or more signalsfrom a driver circuit for turning the first and second MOS transistorson and off. When the first and second transistors are turned off, (i) agate terminal of the first MOS transistor is shorted to a sourceterminal of the first MOS transistor via a first circuit path, and (ii)a gate terminal of the second MOS transistor is shorted to a sourceterminal of the second MOS transistor via a second circuit path. Thesecond circuit path is different than the first circuit path.

In an example method for protecting a device from an ESD event, a firstmetal oxide semiconductor (MOS) transistor and a second MOS transistorof a discharge circuit are turned off when a first voltage potential isfree of ESD spokes. The first and second MOS transistors are connectedin series between the first voltage potential and a second voltagepotential. When an ESD spike is applied to the first voltage potential,the first and second MOS transistors are turned on to cause an ESDcurrent to flow through the transistors.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An electrostatic discharge (ESD) protectiondevice comprising: a trigger circuit; a driver circuit comprising twoparallel branches that are both configured to receive a same ESDprotection signal from the trigger circuit; and a discharge circuitcomprising a first transistor and a second transistor connected inseries to a first voltage potential; wherein when an ESD spike isapplied to the first voltage potential, the same ESD protection signalturns on both the first and second transistors; and wherein the firstand second transistors are fin field effect transistors.
 2. The ESDprotection device of claim 1, wherein the trigger circuit comprises aresistance element and a capacitance element coupled together.
 3. TheESD protection device of claim 2, wherein the capacitance element isimplemented by connecting a drain terminal and a source terminal of aMOS transistor together.
 4. The ESD protection device of claim 2,wherein the capacitance element is formed by two or more MOS transistorsconnected in parallel.
 5. The ESD protection device of claim 2, whereinthe RC time constant of the trigger circuit is a microsecond.
 6. The ESDprotection device of claim 2, wherein the RC time constant of thetrigger circuit is in a range of 100 to 900 nanoseconds.
 7. The ESDprotection device of claim 1, wherein when the first and secondtransistors are turned off, leakage current of the first and secondtransistors is less than or equal to 0.3 μA.
 8. The ESD protectiondevice of claim 1, wherein the first transistor comprises a first PMOStransistor, and the second transistor comprises a second PMOStransistor.
 9. The ESD protection device of claim 1, wherein the firsttransistor comprises an NMOS transistor, and the second transistorcomprises an NMOS transistor.
 10. An electrostatic discharge (ESD)protection circuit comprising: a first transistor and a secondtransistor connected in series to a first voltage potential; wherein thefirst and second transistors are configured to receive one or moresignals from a driver circuit for turning the first and secondtransistors off; wherein when the first and second transistors areturned off, (i) a gate terminal of the first transistor is shorted to asource terminal of the first transistor via a third transistor of thedriver circuit, and (ii) a gate terminal of the second transistor isshorted to a source terminal of the second transistor via a fourthtransistor of the driver circuit; wherein gate terminals of the thirdand fourth transistors are directly coupled together; and wherein thethird and fourth transistors are fin field effect transistors.
 11. TheESD protection circuit of claim 10, wherein when the first and secondtransistors are turned off, leakage current of the first and secondtransistors is less than or equal to 0.3 μA.
 12. The ESD protectioncircuit of claim 10, wherein the first and second transistors are finfield effect transistors.
 13. The ESD protection circuit of claim 10,wherein the first and second transistors are connected to a ground. 14.The ESD protection circuit of claim 10, wherein the first transistorcomprises a first PMOS transistor, and the second transistor comprises asecond PMOS transistor.
 15. The ESD protection circuit of claim 10,wherein the first transistor comprises an NMOS transistor, and thesecond transistor comprises an NMOS transistor.
 16. The ESD protectioncircuit of claim 10, wherein an ESD current flows through the first andsecond transistors when an ESD spike is applied to the first voltagepotential, and wherein the first and second transistors are turned offwhen the first voltage potential is free of ESD spikes.
 17. A method forprotecting a device from an electrostatic discharge (ESD) current, themethod comprising: turning off a first transistor and a secondtransistor of a discharge circuit in an ESD protection device when afirst voltage potential is free of ESD spikes; wherein the ESDprotection device comprises the discharge circuit and a driver circuit;and wherein the driver circuit comprises two parallel branches that areboth configured to receive a same ESD protection signal; and when an ESDspike is applied to the first voltage potential, the ESD protectionsignal is received by the two parallel branches, which respectively turnon the first and second transistors to cause an ESD current to flowthrough the first and second transistors; wherein the first and secondtransistors are fin field effect transistors.
 18. The method of claim17, wherein the ESD protection device further comprises a triggercircuit.
 19. The method of claim 17, wherein the first and secondtransistors are connected in series between the first voltage potentialand a ground.
 20. The method of claim 17, wherein the ESD current flowsfrom the first voltage potential to a second voltage potential andclamps a voltage between the first voltage potential and the secondvoltage potential to a level below a maximum voltage rating.